msf 5n 5 0 500v n - channel mosfet publication order number: [ msf 5 n 5 0 ] ? bruckewell tech nology corporation rev. a - 2014 description the msf 5n 5 0 is a n - channel enhancement - mode mosfet , providing the designer with the best combination of fast switching, ruggedized device design, low on - resistance and cost effectiveness. the to - 220f package is universally preferred for all co mmercial - industrial applications features ? low on resistance ? simple drive requirement ? low gate charge ? fast switching characteristic ? rohs compliant / halogen free package available a pplication (500v - 600v) ? open framed power supply ? adapter ? stb packing & order information 50/tube ; 1,000/box graphic symbol maximum ratings and electrical characteristics absolute maximum ratings symbol parameter value unit v dss drain - source voltage 500 v v gs gate - source voltage 30 v i d contin uous drain current ( @ tc=25 c ) 4.5 a continuous drain current ( @ tc= 100 c ) 2.9 a i dm pulsed drain current 18 a i ar avalanche current 4.5 a e as s ingle pulsed avalanche energy 270 mj e ar repetitive avalanche energy 7.3 mj dv/dt peak diode recovery dv/ dt 5.5 v/ns
msf 5n 5 0 500v n - channel mosfet publication order number: [ msf 5 n 5 0 ] ? bruckewell tech nology corporation rev. a - 2014 absolute maximum ratings symbol parameter value unit p d power dissipation ( tc = 25c) power dissipation (tc= 100 c) 38 w 0.3 w/ c t stg operating and storage temperature range - 55 to +150 c note: 1. repetitive rating : pulse width limi ted by maximum junction temperature 2. i as =4.5a, v dd =50v, r g =25, starting tj =25?c 3. i sd 4.5a, di/dt300a/s, vddbvdss , starting tj =25 c 4. pulse test : pulse width 300s, duty cycle 2% 5. essentially independent of operating temperature static characteristics symbol test conditions min typ. max. unit s v gs v ds = v gs , i d = 250a ds(on) v gs = 1 0 v , i d = 2.25 a -- 1.2 1.5 m dss v gs = 0 v , i d = 250a dss / j i d = 250a, referenced to 25 dss v ds = 50 0 v , v gs = 0 v v ds = 40 0 v , v gs = 0 v , t j = 125 c -- - - 10 100 u a i gss f v ds = 3 0 v, v d s = 0 v 100 n a i gss r v ds = - 3 0 v, v d s = 0 v -- -- - 100 n a dynamic characteristics symbol test conditions min typ. max. unit s q g v ds = 40 0 v,i d = 4.5 a, v gs = 10 v -- 14 18 nc q gs -- 2.5 -- nc q g d -- 6 -- nc t d( on) v ds = 250 v, i d = 2.5 a, r g = 25 r -- 25 50 ns t d(off) -- 45 90 ns tf -- 25 50 ns c iss v ds = 25 v, v gs = 0 v, f = 1.0mhz -- 550 720 pf c oss -- 80 105 pf c rss -- 10 13 pf
msf 5n 5 0 500v n - channel mosfet publication order number: [ msf 5 n 5 0 ] ? bruckewell tech nology corporation rev. a - 2014 source - drain diode characteristics symbol test conditions min typ. max. unit s i s -- - - 4.5 a i sm -- -- 18 v sd i s = 4.5 a , v gs = 0 v -- -- 1.5 v t rr i s = 4.5 a , v gs = 0 v , dif/dt=100a/s -- 250 -- ns q rr -- 2.2 -- uc
msf 5n 5 0 500v n - channel mosfet publication order number: [ msf 5 n 5 0 ] ? bruckewell tech nology corporation rev. a - 2014 characteristics curve fig.1 - on region characteristics fig. 2 - transfer chara cteristics fig.3 - on resistance variation vs drain current and gate voltage fig.4 - body diode forward voltage variation with source current and temperature fig.5 - capacitance characteristics fig.6 - gate charge characteristics
msf 5n 5 0 500v n - channel mosfet publication order number: [ msf 5 n 5 0 ] ? bruckewell tech nology corporation rev. a - 2014 characteristics cur ve fig. 7 - breakdown voltage variation vs temperature fig. 8 - on - resistance variation vs temperature fig. 9 - maximum safe operating area fig. 10 - maximum drain current vs case temperature fig.11 - transient thermal response curve
msf 5n 5 0 500v n - channel mosfet publication order number: [ msf 5 n 5 0 ] ? bruckewell tech nology corporation rev. a - 2014 characteristics t est circuit & waveform fig 12. resistive switching test circuit & waveforms fig 13. gate charge test circuit & waveform fig 14. unclamped inductive switching test circuit & waveforms
msf 5n 5 0 500v n - channel mosfet publication order number: [ msf 5 n 5 0 ] ? bruckewell tech nology corporation rev. a - 2014 fig 15. peak diode recovery dv/dt test circuit & wav eforms
msf 5n 5 0 500v n - channel mosfet publication order number: [ msf 5 n 5 0 ] ? bruckewell tech nology corporation rev. a - 2014 disclaimer all product, product specifications and data are subject to change without notice to improve reliability, function or design or otherwise. bruckewell technology inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, bruckewell), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in an y other disclosure relating to any product. bruckewell makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. to the maximum extent permitted by appli cable law, bruckewell disclaims (i) any and all liability arising out of the application or use of any product. (ii) any and all liability, including without limitation special, consequential or incidental damages. (iii) any and all implied warranties, in cluding warranties of fitness for particular purpose, non - infringement and merchantability. statements regarding the suitability of products for certain types of applications are based on bruckewells knowledge of typical requirements that are often placed on bruckewell products in generic applications. such statements are not binding statements about the suitability of products for a particular application. it is the customers responsibility to validate that a particular product with the properties descr ibed in the product specification is suitable for use in a particular application. parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. product specifications do not expand or other wise modify bruckewells terms and conditions of purchase, including but not limited to the warranty expressed therein.
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